特征:最高工作温度 +105°C(温度特性± 0.5×10-6频率温度特性± 0.07 × 10-6(工作温度范围-10 to +70°C)低消耗电流 : Max.6mA输出电压可选择CMOS或Clipped Sine。采用小型封装:5.0×3.2×1.8mm
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NT5032BB-16.384M-NSC5119D | 3.3V | 40°C +85°C | NDK晶振 |
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NT5032BB-21.25M-NSC5119D | 3.3V | 40°C +85°C | NDK晶振 |
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NT5032BB-24.576M-NSC5119D | 3.3V | 40°C +85°C | NDK晶振 |
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NT5032BB-33.6M-NSC5119D | 3.3V | 40°C +85°C | NDK晶振 |
NT5032BB-38.4M-NSC5119D | 3.3V | 40°C +85°C | NDK晶振 |
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NT5032BB-10M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
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NT5032BB-20M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
NT5032BB-21.25M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
NT5032BB-22.4M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
NT5032BB-24M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
NT5032BB-24.576M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
NT5032BB-25M-NSC5119F | 3.3V | 40°C +105°C | NDK晶振 |
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